IRF510A

Advanced Power MOSFET

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Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 A (Max.) VDS 100V n Lower RDS(ON) : 0.289 (Typ.)

IRF510A
BVDSS 100 V RDS(on) 0.4 ID 5.6 A
TO-220

1 2 3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC 25) Continuous Drain Current (TC 100) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC 25) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
(2) (1) (1) (1)

Value 100 5.6 4 20 20 63 5.6 3.3 6.5 33 0.22 - 55 to 175

Units V A A V mJ A mJ V/ns W W/ C

(2)

C 300

Thermal Resistance
Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 4.51 -62.5 C/W Units

Rev. B1