Advanced Power MOSFET

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) VDS 100V Lower RDS(ON) : 0.032 (Typ.)

IRF550A
BVDSS 100 V RDS(on) 0.04 ID 40 A
TO-220

1 2 3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC 25 C)

Value 100 40 28.3
1 O

Units V A A V mJ A mJ V/ns W W/ C

Continuous Drain Current (TC 100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC 25 C)

160 20 640 40 16.7 6.5 167 1.11 - 55 to 175

O 1 O 1 O 3 O
2

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

C

300

Thermal Resistance
Symbol R JC R CS R JA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 0.9 -62.5

Units

C /W

Rev. B

1999 Fairchild Semiconductor Corporation

IRF550A Datasheet Fairchild Download PDF

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IRF550A DATASHEET