IRF624B

IRF624B/IRFS624B

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

IRF624B/IRFS624B

November 2001

IRF624B/IRFS624B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Features
4.1A, 250V, RDS(on) 1.1 VGS 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G G DS

TO-220
IRF Series

GD S

TO-220F
IRFS Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

IRF624B 250 4.1 2.6 16.4 30
(Note 2) (Note 1) (Note 1) (Note 3)

IRFS624B 4.1 2.6 16.4 75 4.1 4.9 5.5

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

49 0.39 -55 to 150 300

34 0.27

Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max. IRF624B 2.54 0.5 62.5 IRFS624B 3.7 -62.5 Units C/W C/W C/W

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001