Advanced Power MOSFET

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) VDS 100V Lower RDS(ON) : 0.289 (Typ.)

IRFM110A
BVDSS 100 V RDS(on) 0.4 ID 1.5 A
SOT-223
2 1 3

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA 25 C ) Continuous Drain Current (TA 70 C )

Value 100 1.5 1.19
1 O

Units V A A V mJ A mJ V/ns W W/ C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA 25 C ) Linear Derating Factor

12 20 60 1.5 0.2 6.5 2 0.016 - 55 to 150

O 1 O 1 O 3 O
2

Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

C

300

Thermal Resistance
Symbol R JA Characteristic Junction-to-Ambient Typ. -Max. 62 Units

C/ W

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

1999 Fairchild Semiconductor Corporation

IRFM110A Datasheet Fairchild Download PDF

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IRFM110A DATASHEET