IRFM120A

Advanced Power MOSFET

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Advanced Power MOSFET
FEATURES

IRFM120A
BVDSS 100 V RDS(on) 0.2 ID 2.3 A
SOT-223
2

IEEE802.3af Compatible

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) VDS 100V Lower RDS(ON) : 0.155 (Typ.)

1 3

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA 25%) Continuous Drain Current (TA 70%) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA 25%) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds
(

Value 100 2.3 1.84 18 "20 123 2.3 0.24 6.5 2.4 0.019 - 55 to 150

Units V A A V mJ A mJ V/ns W W/%

% 300

Thermal Resistance
Symbol R JA Characteristic Junction-to-Ambient Typ. -Max. 52 Units %/W

When mounted on the minimum pad size recommended (PCB Mount).

Rev. C