IRFM210B

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IRFM210B

November 2001

IRFM210B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features
0.77A, 200V, RDS(on) 1.5 VGS 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching Improved dv/dt capability

D

D
"

S G

G

"
" "

SOT-223
IRFM Series

S

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 70 C) Drain Current - Pulsed
(Note 1)

IRFM210B 200 0.77 0.61 6.0 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

40 0.77 0.2 5.5 2.0 0.016 -55 to 150 300

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJA Parameter Thermal Resistance, Junction-to-Ambient Typ -Max 61 Units C/W

When mounted on the minimum pad size recommended (PCB Mount)

2001 Fairchild Semiconductor Corporation

Rev. B, November 2001

IRFM210B Datasheet Fairchild Download PDF

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IRFM210B DATASHEET