IRFN214B

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IRFN214B

IRFN214B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast.

Features
0.6A, 250V, RDS(on) 2.0 VGS 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

"
" "

TO-92
IRFN Series

GDS

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TA 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TA 25 C) Drain Current - Continuous (TA 70 C) Drain Current - Pulsed
(Note 1)

IRFN214B 250 0.6 0.4 2.4 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TL 25 C)

45 0.6 0.18 4.8 1.8 0.01 -55 to 150 300

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJL RJA Parameter Thermal Resistance, Junction-to-Lead Thermal Resistance, Junction-to-Ambient Typ --Max 70 100 Units C/W C/W

2004 Fairchild Semiconductor Corporation

Rev. A, May 2004