IRFP350A

$GYDQFHG 3RZHU 026)(7

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GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current: 10 A (Max.) VDS 400V Low RDS(ON): 0.254 (Typ.)
1

IRFP350A
BVDSS 400 V RDS(on) 0.3 ID 17 A
TO-3P

2 3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC 25 C) Continuous Drain Current (TC 100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC 25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds
(2) (1) (1) (3) (1)

Value 400 17 10.8 68 30 1156 17 20.2 4.0 202 1.61 - 55 to 150

Units V A A V mJ A mJ V/ns W W/ C

C 300

Thermal Resistance
Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 0.62 -40 C/W Units

Rev. B

1999 Fairchild Semiconductor Corporation