IRFR130A

Advanced Power MOSFET

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) VDS 100V Lower RDS(ON) : 0.092 (Typ.)

IRFR/U130A
BVDSS 100 V RDS(on) 0.11 ID 13 A
D-PAK
2 1 3 1

I-PAK

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC 25 C) Continuous Drain Current (TC 100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA 25 C)

Value 100 13 8.2
1 O

Units V A A V mJ A mJ V/ns W W W/ C

52 20 225 13 4.1 6.5 2.5 41 0.32 - 55 to 150

O 1 O 1 O 3 O
2

Total Power Dissipation (TC 25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

TJ , TSTG TL

300

Thermal Resistance
Symbol R JC R JA R JA Characteristic Junction-to-Case Junction-to-Ambient Junction-to-Ambient Typ. ---Max. 3.08 50 110

Units
C /W

When mounted on the minimum pad size recommended (PCB Mount).
Rev. B

1999 Fairchild Semiconductor Corporation