Advanced Power MOSFET

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) VDS 100V Lower RDS(ON) : 0.289 (Typ.)
1

IRFS510A
BVDSS 100 V RDS(on) 0.4 ID 4.5 A
TO-220F

2

3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC 25 C) Continuous Drain Current (TC 100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC 25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

Value 100 4.5 3.2
1 O

Units V A A V mJ A mJ V/ns W W/ C

20 20 54 4.5 2.1 6.5 21 0.14 - 55 to 175

O 1 O 1 O 3 O
2

C

300

Thermal Resistance
Symbol R JC RJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 6.98 62.5 Units

C /W

Rev. B

1999 Fairchild Semiconductor Corporation

IRFS510A Datasheet Fairchild Download PDF

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IRFS510A DATASHEET