Advanced Power MOSFET

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) VDS 100V Lower RDS(ON) : 0.155 (Typ.)

IRFS520A
BVDSS 100 V RDS(on) 0.2 ID 7.2 A
TO-220F

1

2

3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC 25 C ) Continuous Drain Current (TC 100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC 25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

Value 100 7.2 5.1 37 20 104 7.2 2.8 6.5 28 0.19 - 55 to 175
1 O
2 O 1 O 1 O 3 O

Units V A A V mJ A mJ V/ns W W/ C

C

300

Thermal Resistance
Symbol R JC R JA Characteristic Junction-to-Case Junction-to-Ambient Typ. --Max. 5.4 62.5

Units
C /W

Rev. B

1999 Fairchild Semiconductor Corporation

IRFS520A Datasheet Fairchild Download PDF

Add this permalink to your bookmarks for future download of IRFS520A datasheet

Permalink: http://datasheet.emcelettronica.com/fairchild/IRFS520A

IRFS520A DATASHEET