IRFS614B

IRF614B/IRFS614B

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IRF614B/IRFS614B

November 2001

IRF614B/IRFS614B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

Features
2.8A, 250V, RDS(on) 2.0 VGS 10 V Low gate charge ( typical 8.1 nC) Low Crss ( typical 7.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G G DS

TO-220
IRF Series

GD S

TO-220F
IRFS Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

IRF614B 250 2.8 1.8 8.5 30
(Note 2) (Note 1) (Note 1) (Note 3)

IRFS614B 2.8 1.8 8.5 45 2.8 4.0 5.5

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

40 0.32 -55 to 150 300

22 0.18

Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max. IRF614B 3.14 0.5 62.5 IRFS614B 5.58 -62.5 Units C/W C/W C/W

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001