IRFS820B

IRF820B/IRFS820B

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IRF820B/IRFS820B

November 2001

IRF820B/IRFS820B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge.

Features
2.5A, 500V, RDS(on) 2.6 VGS 10 V Low gate charge ( typical 14 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability

G G DS

TO-220
IRF Series

GD S

TO-220F
IRFS Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

IRF820B 500 2.5 1.6 8.0 30
(Note 2) (Note 1) (Note 1) (Note 3)

IRFS820B 2.5 1.6 8.0 200 2.5 4.9 5.5

Units V A A A V mJ A mJ V/ns W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC 25 C)

- Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

49 0.39 -55 to 150 300

33 0.27

Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max. Typ 2.57 0.5 62.5 Max 3.74 -62.5 Units C/W C/W C/W

2001 Fairchild Semiconductor Corporation

Rev. A, November 2001