IRFW520A

Advanced Power MOSFET

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) VDS 100V Lower RDS(ON) : 0.155 (Typ.)

IRFW/I520A
BVDSS 100 V RDS(on) 0.2 ID 9.2 A
D2-PAK
2

I2-PAK

1 1 3 2 3

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC 25 C) Continuous Drain Current (TC 100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA 25 C )

Value 100 9.2 6.5
1 O

Units V A A V mJ A mJ V/ns W W W/ C

37 20 113 9.2 4.5 6.5 3.8 45 0.3 - 55 to 175

O 1 O 1 O 3 O
2

Total Power Dissipation (TC 25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

TJ , TSTG TL

300

Thermal Resistance
Symbol R JC R JA RJA Characteristic Junction-to-Case Junction-to-Ambient Junction-to-Ambient Typ. ---Max. 3.31 40 62.5

Units
C /W

When mounted on the minimum pad size recommended (PCB Mount).
Rev. B

1999 Fairchild Semiconductor Corporation