IRFW530A

Advanced Power MOSFET

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Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) VDS 100V

IRFW/I530A
BVDSS 100 V RDS(on) 0.11 ID 14 A
D2-PAK
2

I2-PAK

Lower RDS(ON) : 0.092 (Typ.)

1 1 3 2 3

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC 25 C) Continuous Drain Current (TC 100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA 25 C)

Value 100 14 9.9
1 O

Units V A A V mJ A mJ V/ns W W W/ C

56 20 261 14 5.5 6.5 3.8 55 0.36 - 55 to 175

O 1 O 1 O 3 O
2

Total Power Dissipation (TC 25 C ) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

TJ , TSTG TL

300

Thermal Resistance
Symbol R JC R JA R JA Characteristic Junction-to-Case Junction-to-Ambient Junction-to-Ambient Typ. ---Max. 2.74 40 62.5

Units
C /W

When mounted on the minimum pad size recommended (PCB Mount).
Rev. B

1999 Fairchild Semiconductor Corporation