IRFW540A

Advanced Power MOSFET

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Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 Operating Temperature n Lower Leakage Current : 10 A (Max.) VDS 100V n Lower RDS(ON) : 0.041 (Typ.)

IRFW/I540A
BVDSS 100 V RDS(on) 0.052 ID 28 A
D2-PAK
2

I2-PAK

1 1 3 2 3

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC 25) Continuous Drain Current (TC 100) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA 25) Total Power Dissipation (TC 25) Linear Derating Factor TJ , TSTG TL Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 from case for 5-seconds

Value 100 28 19.8 110 20 523 28 10.7 6.5 3.8 107 0.71 - 55 to 175

Units V A A V mJ A mJ V/ns W W W/

300

Thermal Resistance
Symbol RJC RJA RJA Characteristic Junction-to-Case Junction-to-Ambient Junction-to-Ambient Typ. ---Max. 1.4 40 62.5 /W Units

When mounted on the minimum pad size recommended (PCB Mount).
Rev. B1

2001 Fairchild Semiconductor Corporation