IRFW610B

IRFW610B / IRFI610B

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

IRFW610B / IRFI610B

November 2001

IRFW610B / IRFI610B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features
3.3A, 200V, RDS(on) 1.5 VGS 10 V Low gate charge ( typical 7.2 nC) Low Crss ( typical 6.8 pF) Fast switching 100% avalanche tested Improved dv/dt capability

D2-PAK
IRFW Series

G D S

I2-PAK
IRFI Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

IRFW610B / IRFI610B 200 3.3 2.1 10 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA 25 C)

40 3.3 3.8 5.5 3.13 38 0.31 -55 to 150 300

TJ, Tstg TL

Power Dissipation (TC 25 C) - Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Typ ---Max 3.28 40 62.5 Units C/W C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2001 Fairchild Semiconductor Corporation

Rev. B, November 2001