IRFW710B

IRFW710B / IRFI710B

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IRFW710B / IRFI710B

November 2001

IRFW710B / IRFI710B
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

Features
2.0A, 400V, RDS(on) 3.4 VGS 10 V Low gate charge ( typical 7.7 nC) Low Crss ( typical 6.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability

D D

G G S

D2-PAK
IRFW Series

G D S

I2-PAK
IRFI Series

Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TC 25 C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC 25 C) Drain Current - Continuous (TC 100 C) Drain Current - Pulsed
(Note 1)

IRFW710B / IRFI710B 400 2.0 1.3 6.0 30
(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W W/ C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA 25 C)

100 2.0 3.6 5.5 3.13 36 0.29 -55 to 150 300

TJ, Tstg TL

Power Dissipation (TC 25 C) - Derate above 25 C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Typ ---Max 3.44 40 62.5 Units C/W C/W C/W

When mounted on the minimum pad size recommended (PCB Mount)

2001 Fairchild Semiconductor Corporation

Rev. B, November 2001