ISL9K1560G3

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ISL9K1560G3

November 2002

ISL9K1560G3
15A, 600V StealthTM Dual Diode
General Description
The ISL9K1560G3 is a StealthTM dual diode optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49410.

Features
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta 1.2 Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr 30ns Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Avalanche Energy Rated

Applications
Switch Mode Power Supplies Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode

Package
JEDEC STYLE TO-247
ANODE 2 CATHODE CATHODE (BOTTOM SIDE METAL) ANODE 1

Symbol
K

Device Maximum Ratings (per leg) TC 25 C unless otherwise noted
Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC 145oC) Total Device Current (Both Legs) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 Ratings 600 600 600 15 30 30 200 150 20 -55 to 175 300 260 Units V V V A A A A W mJ C C C

CAUTION: Stresses above those listed in "Device Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2002 Fairchild Semiconductor Corporation ISL9K1560G3 Rev. C1