ISL9N302AP3

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ISL9N302AP3

January 2002

ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Features
Fast switching rDS(ON) 0.0019 (Typ), VGS 10V rDS(ON) 0.0027 (Typ), VGS 4.5V Qg (Typ) 110nC, VGS 5V Qgd (Typ) 31nC CISS (Typ) 11000pF

Applications
DC/DC converters

SOURCE DRAIN GATE D

G DRAIN (FLANGE) S

TO-220AB MOSFET Maximum Ratings TA 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC 25oC, VGS 10V) Continuous (TC 100oC, VGS 4.5V) Pulsed Power dissipation Derate above 25oC Operating and Storage Temperature Ratings 30 20 75 75 Figure 4 345 2.3 -55 to 175 Units V V A A A W W/oC oC

ID

PD TJ, TSTG

Thermal Characteristics
RJC RJA Thermal Resistance Junction to Case TO-220 Thermal Resistance Junction to Ambient TO-220 0.43 62
oC/W oC/W

Package Marking and Ordering Information
Device Marking N302AP Device ISL9N302AP3 Package TO-220AB Reel Size Tube Tape Width N/A Quantity 50

2002 Fairchild Semiconductor Corporation

Rev. B January 2002

ISL9N302AP3 Datasheet Fairchild Download PDF

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ISL9N302AP3 DATASHEET