ISL9N302AS3ST

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ISL9N302AS3ST

April 2002

ISL9N302AS3ST
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Features
Fast switching rDS(ON) 0.0019 (Typ), VGS 10V rDS(ON) 0.0027 (Typ), VGS 4.5V Qg (Typ) 110nC, VGS 5V Qgd (Typ) 31nC CISS (Typ) 11000pF

Applications
DC/DC converters

DRAIN (FLANGE) D GATE SOURCE G S

TO-263AB MOSFET Maximum Ratings TA 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC 25oC, VGS 10V) ID Continuous (TC 100oC, VGS 4.5V) Continuous (TC 25oC, VGS 10V, R JA 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above 25oC Operating and Storage Temperature 75 75 28 Figure 4 345 2.3 -55 to 175 A A A A W W/oC
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Ratings 30 20

Units V V

Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-263 Thermal Resistance Junction to Ambient TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.43 62 43
o o o

C/W C/W C/W

Package Marking and Ordering Information
Device Marking N302AS Device ISL9N302AS3ST Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units

2002 Fairchild Semiconductor Corporation

Rev. B1,April 2002