ISL9N303AP3

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3

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ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3

September 2002

PWM Optimized

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.

Features
Fast switching rDS(ON) 0.0026 (Typ), VGS 10V rDS(ON) 0.004 (Typ), VGS 4.5V Qg (Typ) 61nC, VGS 5V Qgd (Typ) 17nC CISS (Typ) 7000pF

Applications
DC/DC converters

DRAIN (FLANGE)

SOURCE DRAIN GATE SOURCE GATE

DRAIN (FLANGE)

SOURCE DRAIN GATE G DRAIN (FLANGE)

TO-220AB

TO-263AB

TO-262AB

MOSFET Maximum Ratings TC 25 C unless otherwise noted
Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC 25oC, VGS 10V) ID Continuous (TC 100oC, VGS 4.5V) Continuous (TC 25oC, VGS 10V, RJA 43oC/W) Pulsed PD TJ, TSTG Power dissipation Derate above Operating and Storage Temperature 75 75 25 Figure 4 215 1.43 -55 to 175 W W/oC
o

Ratings 30 20

Units V V A A A

Thermal Characteristics
RJC RJA RJA Thermal Resistance Junction to Case TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263 Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 0.7 62 43
oC/W o o

C/W C/W

Package Marking and Ordering Information
Device Marking N303AS N303AP N303AS Device ISL9N303AS3ST ISL9N303AP3 ISL9N303AS3 Package TO-263AB TO-220AB TO-262AA Reel Size 330mm Tube Tube Tape Width 24mm N/A N/A Quantity 800 units 50 units 50 units

2002 Fairchild Semiconductor Corporation

ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1