ISL9R8120P2

ISL9R8120P2 / ISL9R8120S3S

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ISL9R8120P2 / ISL9R8120S3S

May 2002

ISL9R8120P2 / ISL9R8120S3S
8A, 1200V StealthTM Diode
General Description
The ISL9R8120P2 and ISL9R8120S3S are StealthTM diodes optimized for low loss performance in high frequency hard switched applications. The StealthTM family exhibits low reverse recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with a 1200V NPT IGBT to provide the most efficient and highest power density design at lower cost. Formerly developmental type TA49413.

Features
Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta 5.5 Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr 32ns Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V Avalanche Energy Rated

Applications
Switch Mode Power Supplies Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode

Package
JEDEC TO-220AC
ANODE CATHODE

Symbol
JEDEC TO-263AB
K CATHODE (FLANGE) N/C A ANODE

CATHODE (BOTTOM SIDE METAL)

Device Maximum Ratings TC 25 C unless otherwise noted
Symbol VRRM VRWM VR IF(AV) IFRM IFSM PD EAVL TJ, TSTG TL TPKG Parameter Repetitive Peak Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TC 105oC) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) Power Dissipation Avalanche Energy (1A, 40mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528 Ratings 1200 1200 1200 8 16 100 71 20 -55 to 150 300 260 Units V V V A A A W mJ C C C

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
2002 Fairchild Semiconductor Corporation ISL9R8120P2 / ISL9R8120S3S Rev. A