J270

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J270

J270
P-Channel Switch
This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from process 88.

TO-92

1. Drain 2. Gate 3. Source

Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Ratings -30 30 50 -55 150 Units V V mA C

This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol Off Characteristics V(BR)GSS IGSS VGS(off) IDSS gfs goss Parameter Test Condition IG -1.0 A, VDS 0 VGS -20V, VDS 0 VDS -15V, ID 1.0nA VDS -15V, VGS 0 VGS 0V, VDS 15V, f 1.0kHz VGS 0V, VDS 15V, f 1.0kHz 0.5 -2.0 6000 Min. 30 200 2.0 -15 15000 200 Max. Units V pA V mA mhos mhos Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transferconductance Common- Source Output Conductance

On Characteristics Small Signal Characteristics

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/ C C/W C/W

2003 Fairchild Semiconductor Corporation

Rev. A, July 2003