J304

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J304

J304
N-Channel RF Amplifier
This device is designed for electronic switching applications such as low ON resistance analog switching. Sourced from process 50.

TO-92

1. Drain 2. Source 3. Gate

NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VDG VGS IGF TJ, TSTG Parameter Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Operating and Storage Junction Temperature Range Ratings 30 -30 10 -55 150 Units V V mA C

This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics TC 25 C unless otherwise noted
Symbol Off Characteristics V(BR)GSS IGSS VGS(off) IDSS gfs goss Parameter Test Condition IG -1.0 A, VDS 0 VGS -20V, VDS 0 VDS 15V, ID 1.0nA VDS 15V, VGS 0 VGS 0V, VDS 15V, f 1KHz VGS 0V, VDS 15V, f 1KHz -2.0 5.0 4500 Min. -30 -100 -6.0 15 7500 50 Typ. Max. Units V pA V mA S S Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage Zero-Gate Voltage Drain Current Forward Transconductance Output Conductance

On Characteristics

Thermal Characteristics TA 25 C unless otherwise noted
Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 350 2.8 125 357 Units mW mW/ C C/W C/W

Device mounted on FR-4 PCB 1.5" 1.6" 0.06"

2002 Fairchild Semiconductor Corporation

Rev. A, September 2002