KSA1015

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KSA1015

KSA1015
LOW FREQUENCY AMPLIFIER
Collector-Base Voltage : VCBO -50V Complement to KSC1815

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TST9 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -50 -50 -5 -150 -50 400 125 -65 150 Units V V V mA mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (sat) fT Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC -100 A, IE 0 IC -10mA, IB 0 IE -10 A, IC 0 VCB -50V, IE 0 VEB -5V, IC 0 VCE -6V, IC -2mA VCE -6V, IC -150mA IC -100mA, IB -10mA IC -100mA, IB -10mA VCE -10V, IC -1mA VCB -10V, IE 0, f 1MHz VCE -6V, IC -0.1mA f 100Hz, RG 10k 80 4 0.5 7 6 70 25 -0.1 Min. -50 -50 -5 -0.1 -0.1 400 -0.3 -1.1 V V MHz pF dB Typ. Max. Units V V V A A

hFE Classification
Classification hFE1 O 70 140 Y 120 240 GR 200 400

2002 Fairchild Semiconductor Corporation

Rev. A3, September 2002