KSA1142

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KSA1142

KSA1142
Audio Frequency Power Amplifier High Freqency Power Amplifier
Complement to KSC2682

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Ratings - 180 - 180 -5 - 100 1.2 8 150 - 55 150 Units V V V mA W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob NF Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition VCB - 180V, IE 0 VEB - 3V, IC 0 VCE - 5V, IC - 1mA VCE - 5V, IC - 10mA IC - 50mA, IB - 5mA IC - 50mA, IB - 5mA VCE - 10V, IC - 20mA VCB - 10V, IE 0, f 1MHz VCE - 10V, IC - 1mA RS 10k, f 1MHz 90 100 200 200 - 0.16 - 0.8 180 4.5 4 7 Min. Typ. Max. -1 -1 320 - 0.5 - 1.5 V V MHz pF dB Units A A

Pulse Test: PW350 s, Duty Cycle2% Pulsed

hFE Classification
Classification hFE2 O 100 200 Y 160 320

2000 Fairchild Semiconductor International

Rev. A, February 2000