KSA1150

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KSA1150

KSA1150
Low Frequency Power Amplifier
Collector Dissipation : PC 300mW Complement to KSC2710

TO-92S

1.Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -40 -20 -5 -500 -700 300 150 -55 150 Units V V V mA mA mW C C

PW350ms, Duty cycle50%

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC -100 A, IE 0 IC -10mA, IB 0 IE -100 A, IC 0 VCB -25V, IE 0 VEB -3V, IC 0 VCE -1V, IC -100mA IC -500mA, IB -50mA IC -500mA, IB -50mA 40 -0.3 -1.0 Min. -40 -20 -5 -100 -100 400 -0.4 -1.3 V V Typ. Max. Units V V V nA nA

Pulse Test: PW350 s, Duty cycle2%

hFE Classification
Classification hFE R 40 80 O 70 140 Y 120 240 G 200 400

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002