KSA1175

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KSA1175

KSA1175
Low Frequency Amplifier
Collector-Base Voltage : VCBO -60V Complement to KSC2785

TO-92S

1.Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -60 -50 -5 -150 250 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob NF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure Test Condition IC -100 A, IE 0 IC -10mA, IB 0 IE -10 A, IC 0 VCB -60V, IE 0 VEB -5V, IC 0 VCE -6V, IC -1mA IC -100mA, IB -10mA VCE -6V, IE -1mA VCE -6V, IC -10mA VCB -10V, IE 0, f 1MHz VCE -6V, IC -0.3mA f 100Hz, RS 10K -0.50 50 40 -0.18 -0.62 180 2.8 6.0 20 Min. -60 -50 -5 -0.1 -0.1 700 -0.3 -0.80 V V MHz pF dB Typ. Max. Units V V V A A

hFE Classification
Classification hFE R 40 80 O 70 140 Y 120 240 G 200 400 L 350 700

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002