KSA1182

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KSA1182

KSA1182
Low Frequency Power Amplifier
Complement to KSC2859
3

2 1

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -35 -30 -5 -500 150 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB -35V, IE 0 VEB -5V, IC 0 VCE -1V, IC -100mA V CE -6V, IC -400mA IC -100mA, IB -10mA VCE -1V , IC -100mA VCE -6V, IC -20mA VCB -6V, IE 0, f 1MHz 70 25 -0.1 -0.8 200 13 Min. Typ. Max. -0.1 -0.1 240 -0.25 -1.0 V V MHz pF Units A A

hFE Classification
Classification hFE1 Marking O 70 140 Y 120 240

F 10
hFE grade

2002 Fairchild Semiconductor Corporation

Rev. A2, September 2002