KSA1201

KSA1201 PNP Epitaxial Silicon Transistor

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KSA1201 PNP Epitaxial Silicon Transistor

July 2005

KSA1201
PNP Epitaxial Silicon Transistor
Power Amplifier
Collector-Emitter Voltage: VCEO -120V fT 120MHz Collector Power Dissipation PC 1 2W : Mounted on Ceramic Board Complement to KSC2881

Marking

1 2 P Y
1

0 1 W W
Weekly code Year code hFE grage

SOT-89

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC IB PC P C TJ TSTG Collector Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current

Ta 25 C unless otherwise noted

Parameter

Ratings
-120 -120 -5 -800 -160 500 1,000 150 -55 150

Units
V V V mA mA mW mW C C

Collector Power Dissipation Junction Temperature Storage Temperature

Mounted on Ceramic Board (250mm2 x 0.8mm)

Electrical Characteristics T
Symbol
BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob

25 C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance

Test Condition
IC -10mA, IB 0 IE -1mA, IC 0 VCB -120V, IE 0 VBE -5V, IC 0 VCE -5V, IC -100mA IC -500mA, IB -50mA VCE -5V, IC -500mA VCE -5V, IC -100mA VCB -10V, IE 0, f 1MHz

Min.
-120 -5

Typ.

Max.

Units
V V

-100 -100 80 240 -1.0 -1.0 120 30

nA nA V V MHz pF

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

KSA1201 Rev. B2