KSA1203

KSA1203 PNP Epitaxial Silicon Transistor

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

KSA1203 PNP Epitaxial Silicon Transistor

July 2005

KSA1203
PNP Epitaxial Silicon Transistor
Low Frequency Power Amplifier
3W Output application Collector Power Dissipation PC 1 2W : Mounted on Ceramic Board Complement to KSC2883

Marking

1 2 P Y
1

0 3 W W
Weekly code Year code hFE grage

SOT-89

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC IB PC P C TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current

Ta 25 C unless otherwise noted

Parameter

Ratings
-30 -30 -5 -1.5 -0.3 500 1,000 150 -55 150

Units
V V V A A mW mW C C

Collector Power Dissipation Junction Temperature Storage Temperature
2

Mounted on Ceramic Board (250mm 0.8mm)

Electrical Characteristics T
Symbol
BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (on) fT Cob

25 C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance

Test Condition
IC -10mA, IB 0 IE -1mA, IC 0 VCB -30V, IE 0 VBE -5V, IC 0 VCE -2V, IC -500mA IC -1.5A, IB -30mA VCE -2V, IC -500mA VCE -2V, IC -500mA VCB -10V, IE 0, f 1MHz

Min.
-30 -5

Typ.

Max.

Units
V V

-100 -100 100 320 -2.0 -1.0 120 50

nA nA V V MHz pF

2005 Fairchild Semiconductor Corporation

www.fairchildsemi.com

KSA1203 Rev. B3