KSA1241

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KSA1241

KSA1241
Power Amplifier Applications
Low Collector-Emitter Saturation Voltage Complement to KSC3076

I-PACK

1. Base 2. Collector 3. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IB IC PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Ratings - 55 - 50 -5 -1 -2 1 10 150 - 55 150 Units V V V A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition IC - 10mA, IB 0 VCB - 50V, IE 0 VEB - 5V, IC 0 VCE - 2V, IC - 0.5A VCE - 2V, IC - 1.5A IC - 1A, IB - 0.05A IC - 1A, IB - 0.05A VCE - 2V, IC - 0.5A VCB - 10V, f 1MHz VCC - 30, IC - 1A IB1 - IB2 - 0.05A RL 30 100 40 0.1 1 0.1 70 40 Min. - 50 Typ. Max. -1 -1 240 - 0.5 - 1.2 V V MHz pF s s s Units V A A

hFE Classification
Classification hFE1 O 70 140 Y 120 240

2000 Fairchild Semiconductor International

Rev. A, February 2000