KSA1244

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KSA1244

KSA1244
High Current Switching
Low Collector-Emitter Saturation Voltage Complement to KSC3074

I-PACK

1. Base 2. Collector 3. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IB IC PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Ratings - 60 - 50 -5 -1 -5 1 20 150 - 55 150 Units V V V A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(Sat) VBE(Sat) fT Cob tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition IC - 10mA, IB 0 VCB - 50V, IE 0 VEB - 5V, IC 0 VCE - 1V, IC - 1A VCE - 1V, IC - 3A IC - 3A, IB - 0.15A IC - 3A, IC - 0.15A VCE - 4V, IC - 1A VCB - 10V, f 1MHz VCC - 30V, IC - 3A IB1 -I B2 - 0.15A RL 10 - 0.9 60 170 0.1 1 0.1 70 30 Min. - 50 Typ. Max. -1 -1 240 -0.5 -1.2 V V MHz pF s s s Units V A A

hFE Classification
Classification hFE1 O 70 140 Y 120 240

2000 Fairchild Semiconductor International

Rev. A, February 2000