KSA1281

KSA1281

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KSA1281

KSA1281
Audio Power Amplifier
Collector Power Dissipation : PC 1W 3 Watt Output Application

1

TO-92L

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -50 -50 -5 -2 1 150 -55 150 Units V V V A W C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VBE (sat) VCE (sat) Cob fT Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Test Condition IC -100, IE 0 IC -10mA, IB 0 IE -1mA, IC 0 VCB -50V, IE 0 VEB -5V, IC 0 VCE -2V, IC -500mA VCE -2V, IC -1.5A IC -1A, IB -0.05mA IC -1A, IB -0.05mA VCB -10V, IE 0, f 1MHz VCE -2V, IC -500mA 40 100 70 40 Min. -50 -50 -5 -100 -100 240 -1.2 -0.5 V V pF MHz Typ. Max. Units V V V nA nA

hFE1 Classification
Classification hFE1 O 70 140 Y 120 240

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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