KSA1298

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KSA1298

KSA1298
Low Frequency Power Amplifier
Complement to KSC3265
2 1 3

SOT-23

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature

1. Base 2. Emitter 3. Collector

Ratings -30 -25 -5 -800 -160 200 150 -55 150

Units V V V mA mA mW C C

Refer to KSA643 for graphs.

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) VBE (on) fT Cob Parameter Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC -10mA, IB 0 IE -1mA, IC 0 VCB -30V, IE 0 VBE -5V, IC 0 VCE -1V, IC -100mA VCE -1V, IC -800mA IC -500mA, IB -20mA VCE -1V, IC -10mA VCE -5V, IC -10mA VCB -10V, IE 0, f 1MHz -0.5 120 13 100 40 Min. -25 -5 -100 -100 320 -0.4 -0.8 V V MHz pF Typ. Max. Units V V nA nA

hFE1 Classification
Classification hFE1 Marking O 100 200 Y 160 320

J1 O
hFE grade

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001