KSA1381

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

KSA1381

KSA1381
CRT Display, Video Output
High Collector-Emitter Breakdown Voltage : VCEO -300V Low Reverse Transfer Capacitance : Cre 2.3pF at VCB -30V

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Collector Dissipation (Ta 25 C) Junction Temperature Storage Temperature Ratings - 300 - 300 -5 - 100 - 200 7 1.2 150 - 55 150 Units V V V mA mA W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Cre Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Test Condition IC - 10 A, IE 0 IC - 1mA, IB 0 IE - 10 A, IC 0 VCB - 200V, IE 0 VEB - 4V, IC 0 VCE - 10V, IC - 10mA IC - 20mA, IB - 2mA IC - 20mA, IB - 2mA VCE - 30V, IC - 10mA VCB - 30V, f 1MHz VCB - 30V, f 1MHz 150 3.1 2.3 40 Min. - 300 - 300 -5 - 0.1 - 0.1 320 - 0.6 -1 V V MHz pF pF Typ. Max. Units V V V A A

hFE Classification
Classification hFE C 40 80 D 60 120 E 100 200 F 160 320

2000 Fairchild Semiconductor International

Rev. A, February 2000