KSA1406

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KSA1406

KSA1406
CRT Display, Video Output
High Current Gain Bandwidth Product : fT 400MHz (Typ.) High Collector-Base Breakdown Voltage : VCBO -200V Low Reverse Transfer Capacitance : Cre 1.7pF (Typ.)

TO-126 2.Collector 3.Base

1. Emitter

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Ratings - 200 - 200 -4 - 100 - 200 1.2 7 150 - 55 150 Units V V V mA mA W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(Sat) VBE(Sat) fT Cob Cre Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Reverse Transfer Capacitance Test Condition IC - 10 A, IB 0 IC - 1mA, RBE IE - 100 A, IC 0 VCB - 150V, IC 0 VBE - 2V, IE 0 VCE - 10V, IC - 10mA VCE - 10V, IC - 60mA IC - 30mA, IC - 3mA IC - 30mA, IC - 3mA VCE - 30V, IC - 30mA VCB - 30V, f 1MHz VCB - 30V, f 1MHz 400 2.3 1.7 40 20 Min. - 200 - 200 -4 - 0.1 - 0.1 120 - 0.8 - 1.8 V V MHz pF pF Typ. Max. Units V V V A A

hFE Classification
Classification hFE1 C 40 80 D 60 120

2000 Fairchild Semiconductor International

Rev. A, February 2000