KSA1625

Datasheet preview, take a look at Datasheets before downloading (Data Sheet is available on manufacturer site)

KSA1625

KSA1625
High Voltage Switch
High Breakdown Voltage High Speed Switching

TO-92

1. Emitter 2. Collector 3. Base

PNP Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IB IC ICP PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation (Ta 25 C) Collector Power Dissipation (TC 25 C) Junction Temperature Storage Temperature Ratings -400 -400 -7 -0.25 -0.5 -1.0 0.75 2 150 -55 150 Units V V V A A A W W C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current Dc Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Storage Time Fall Time Test Condition IC -1mA, IB 0 VCB -400V, IE 0 VEB -5V, IC 0 VCE -5V, IC -50mA IC -100mA, IB -10mA IC -100mA, IB -10mA VCE -10V, IC -10mA VCB -10V, f 1MHz IC -100mA, RL 1.5k IB1 - IB2 -10mA VCC -150V 10 25 1 5 1 40 Min. -400 Max. -1 -1 200 -1 -1.2 V V MHz pF s s s Units V A A

hFE Classification
Classification hFE M 40 80 L 60 120 K 100 200

2002 Fairchild Semiconductor Corporation

Rev. A2, June 2002