KSA3010

KSA3010 PNP Epitaxial Silicon Transistor

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KSA3010 PNP Epitaxial Silicon Transistor

January 2007

KSA3010
PNP Epitaxial Silicon Transistor
Audio Power Amplifier High Current Capability : IC - 6A High Power Dissipation Wide S.O.A Complement to KSC4010
1

TO-3P

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings T 25 C unless otherwise noted
a

Symbol
VCBO VCEO VEBO IC ICP PC TJ TSTG

Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature

Value
-120 -120 -5 -6 -12 60 150 - 50 150

Units
V V V A A W C C

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T 25 C unless otherwise noted
a

Symbol
RJC
Device mounted on the minimum pad size.

Parameter
Thermal Resistance, Junction to Case

Value
2.0

Units
C/W

Electrical Characteristics
Symbol
BVCEO ICBO IEBO hFE VCE(sat) VBE(on) fT Cob

Ta 25 C unless otherwise noted

Parameter
Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance

Test Conditions
IC -5A, IB 0 VCB -120V, IE 0 VEB -5V, IC 0 VCE -5V, IC -1A, IC -5A, IB -0.5A VCE -5V, IC -5A VCE -5V, IC -1A VCB -10V, IE 0, f 1MHz

Min.
-120 55 -

Typ.
30 180

Max.
-10 -10 160 -2.5 -1.5 -

Units
V A A

V V MHz pF

Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

hFE Classification
Classification hFE R 55 110 O 80 160

2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

KSA3010 Rev. C