KSA473

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KSA473

KSA473
Low Frequency Power Amplifier Power Regulator
Collector Current : IC -3A Collector Dissipation : PC 10W (TC 25 C) Complement to KSC1173
1

TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Ratings - 30 - 30 -5 -3 10 150 - 55 150 Units V V V A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC - 500 A, IE 0 IC - 10mA, IB 0 IE - 1mA, IC 0 VCB - 20V, IE 0 VEB - 5V, IC 0 VCE - 2V, IC - 0.5A VCE - 2V, IC - 2.5A IC - 2A, IB - 0.2A VCE - 2V, IC - 0.5A VCE - 2V, IC - 0.5A VCB - 10V, IE 0, f 1MHz 70 25 - 0.3 - 0.75 100 40 Min. - 30 - 30 -5 - 1.0 - 1.0 240 - 0.8 - 1.0 V V MHz pF Typ. Max. Units V V V A A

hFE Classification
Classification hFE1 O 70 140 Y 120 240

2000 Fairchild Semiconductor International

Rev. A, February 2000