KSA539

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KSA539

KSA539
Low Frequency Amplifier
Complement to KSC815 Collector-Base Voltage: VCBO -60V Collector Power Dissipation: PC 400mW Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -60 -45 -5 -200 400 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VBE(on) VCE (sat) VBE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC -100 A, IE 0 IC -10mA, IB 0 IE -10 A, IC 0 VCB -45V, IE 0 VEB -3V, IC 0 VCE -1V IC -50mA VCE -1V, IC -10mA IC -150mA, IB -15mA IC -150mA, IB -15mA 40 -0.60 -0.65 -0.25 -0.9 Min. -60 -45 -5 -100 -100 240 -0.90 -0.5 -1.2 V V V Typ. Max. Units V V V nA nA

hFE Classification
Classification hFE R 40 80 O 70 140 Y 120 240

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001