KSA642

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KSA642

KSA642
Low Frequency Power Amplifier
Complement to KSD227 Collector Power Dissipation : PC 400mW Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base)

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Ratings -30 -25 -5 -300 -500 400 150 -55 150 Units V V V mA mA mW C C

PW10ms, Duty cycle50%

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC -100 A, IE 0 IC -10mA. IB 0 IE -10 A. IC 0 VCB -25V, IE 0 VEB -3V, IC 0 VCE -1V, IC -50mA IC -300mA, IB -30mA 70 -0.35 Min. -30 -25 -5 -100 -100 400 -0.6 V Typ. Max. Units V V V nA nA

Pulse Test: PW350 s, Duty cycle2%

hFE Classification
Classification hFE O 70 140 Y 120 240 G 200 400

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001