KSA708

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KSA708

KSA708
Low Frequency Amplifier Medium Speed Switching
Complement to KSC1008 Collector-Base Voltage : VCBO -80V Collector Power Dissipation : PC 800mW Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base)
1

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -80 -60 -8 -700 800 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC -100 A, IE 0 IC -10mA, IB 0 IE -100 A, IC 0 VCB -60V, IE 0 VEB -5V, IC 0 VCE -2V, IC -50mA IC -500mA, IB -50mA IC -500mA, IB -50mA VCE -10V, IC -50mA VCB -10V, IE 0, f 1MHz 40 -0.3 -0.9 50 13 Min. -80 -60 -8 -0.1 -0.1 240 -0.7 1.1 V V MHz pF Typ. Max. Units V V V A A

Pulse Test: PW350 s, Duty cycle2%

hFE Classification
Classification hFE R 40 80 O 70 140 Y 120 240

2001 Fairchild Semiconductor Corporation

Rev. A1, August 2001