KSA709

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KSA709

KSA709
High Voltage Amplifier
Collector-Base Voltage : VCBO -160V Collector Power Dissipation : PC 800mW Complement to KSC1009 Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -160 -150 -8 -700 800 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC -100 A, IE 0 IC -10mA, IB 0 IE -100 A, IC 0 VCB -100V, IE 0 VEB -5V, IC 0 VCE -2V, IC -50mA IC -200mA, IB -20mA IC -200mA, IB -20mA VCE -10V, IC -50mA VCB -10V, IE 0, f 1MHz 70 -0.3 -0.9 50 10 Min. -160 -150 -8 -0.1 -0.1 400 -0.4 -1.0 V V MHz pF Typ. Max. Units V V V A A

Pulse Test: PW350 s, Duty cycle2%

hFE Classification
Classification hFE O 70 140 Y 120 240 G 200 400

2004 Fairchild Semiconductor Corporation

Rev. B1, April 2004