KSA812

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KSA812

KSA812
Low Frequency Amplifier
Collector-Base Voltage : VCBO -60V Complement to KSC1623
3

2 1

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Ratings -60 -50 -5 -100 150 150 -55 150 Units V V V mA mW C C

Electrical Characteristics Ta 25 C unless otherwise noted
Symbol ICBO IEBO hFE VCE (sat) VBE (on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB -60V, IE 0 VEB -5V, IC 0 VCE -6V, IC -1mA IC -100mA, IB -10mA VCE -6V, IC -1mA VCE -6V, IC -10mA VCB -10V, IE 0, f 1MHz -0.55 90 200 -0.18 -0.62 180 4.5 Min. Typ. Max. -0.1 -0.1 600 -0.3 -0.65 V V MHz pF Units A A

hFE Classification
Classification hFE O 90 180 Marking Y 135 270 G 200 400 L 300 600

D1 O
hFE grade

2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001