KSA940

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KSA940

KSA940
Vertical Deflection Output Power Amplifier
Complement to KSC2073

TO-220 2.Collector 3.Emitter

1.Base

PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Ratings - 150 - 150 -5 - 1.5 - 0.5 1.5 25 150 - 55 150 Units V V V A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol ICBO IEBO hFE VCE (sat) VBE(on) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB - 120V, IE 0 VEB - 5V, IC 0 VCE - 10V, IC - 500mA IC - 500mA, IB - 50mA VCE - 10V, IC - 500mA VCE - 10V, IC - 500mA VCB - 10V, IE 0 f 1MHz - 0.65 - 0.75 4 55 40 75 Min. Typ. Max. - 10 - 10 140 - 1.5 - 0.85 V V MHz pF Units A A

2000 Fairchild Semiconductor International

Rev. A, February 2000