KSB1017

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KSB1017

KSB1017
Power Amplifier Applications
Complement to KSD1408

TO-220F 2.Collector 3.Emitter

1.Base

PNP Silicon Epitaxial Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation ( TC 25 C) Junction Temperature Storage Temperature Value - 80 - 80 -5 -4 - 0.4 25 150 - 55 150 Units V V V A A W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(on) fT Cob Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC - 50mA, IB 0 VCB - 80V, IE 0 VEB - 5V, IC 0 VCE - 5V, IC - 0.5A VCE - 5V, IC - 3A IC - 3A, IB - 0.3A VCE - 5V, IC - 3A VCE - 5V, IC - 0.5A VCB - 10V, f 1MHz 40 15 -1 -1 9 130 Min. -80 Typ. Max. - 30 - 100 240 - 1.7 - 1.5 V V MHz pF Units V A A

hFE Classification
Classification hFE1 R 40 80 O 70 140 Y 120 240

2000 Fairchild Semiconductor International

Rev. A, February 2000