KSB1022

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KSB1022

KSB1022
High Power Switching Applications
High DC Current Gain Low Collector-Emitter Saturation Voltage Complement to KSD1417

TO-220F 2.Collector 3.Emitter

1.Base

PNP Silicon Darlington Transisto
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value - 60 - 60 -5 -7 - 10 - 0.7 2 30 150 - 55 150 Units V V V A A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition IC - 50mA, IB 0 VCB - 60V, IE 0 VEB - 5V, IC 0 VCE - 3V, IC - 3A VCE - 3V, IC - 7A IC - 3A, IB - 6mA IC - 7A, IB - 14mA IC - 3A, IB - 6mA VCC - 45V, IC - 3A IB1 - IB2 - 6mA RL 15 2000 1000 - 0.95 - 1.3 - 1.55 0.8 2 2.5 Min. - 60 Typ. Max. - 100 -4 15000 - 1.5 -2 - 2.5 V V V s s s Units V A mA

2000 Fairchild Semiconductor International

Rev. A, February 2000