KSB1023

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KSB1023

KSB1023
Power Amplifier Applications
High DC Current Gain Low Collector-Emitter Saturation Voltage Complement to KSD1413

TO-220F 2.Collector 3.Emitter

1.Base

PNP Silicon Darlington Transistor
Absolute Maximum Ratings TC 25 C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (Ta 25 C) Collector Dissipation (TC 25 C) Junction Temperature Storage Temperature Value - 60 - 40 -5 -3 -6 - 0.3 2 20 150 - 55 150 Units V V V A A A W W C C

Electrical Characteristics TC 25 C unless otherwise noted
Symbol BVCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time Test Condition IC - 25mA, IB 0 VCB - 60V, IE 0 VEB - 5V, IC 0 VCE - 2V, IC - 1A VCE - 2V, IC - 3A IC - 2A, IB - 4mA IC - 2A, IB - 4mA VCC - 30V, IC - 3A IB1 - IB2 - 6mA RL 10 0.3 0.6 0.25 2000 1000 - 1.5 -2 V V s s s Min. - 40 Typ. Max. - 20 - 2.5 Units V A mA

2000 Fairchild Semiconductor International

Rev. A, February 2000